APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 6 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 65 i c continuous collector current t c = 80c 50 i cm pulsed collector current t c = 25c 230 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 250 w rbsoa reverse bias safe operating area t j = 125c 100a@500v these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. 23 22 13 q1 cr 1 30 8 q2 7 14 cr2 16 r1 29 15 26 27 4 3 31 32 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? v ces = 600v i c = 50a @ tc = 80c applicatio n ? ac and dc motor control ? switched mode power supplies ? power factor correction features ? non punch through (npt) fast igbt ? - low voltage drop - low tail current - switching freque nc y up to 50 khz - soft recovery parallel diodes - low diode vf - low leakage current - avalanche energy rated - rbsoa and scsoa rated - symmetrical design ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? outsta ndi ng perfor ma nce a t hi gh freque nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mo unting ? low profile ? easy paralleling due to positive tc of vcesat ? each leg can be easily paralleled to achieve a single boost of twice the current capab ility. d ual boost choppe r n p t igbt power module
APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv ces collector - emitter breakdown voltage v ge = 0v, i c = 500a 600 v t j = 25c 1 500 a i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 1 ma t j = 25c 1.7 2.0 2.45 v ce(on) collector emitter on voltage v ge =15v i c = 50a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 2200 c oes output capacitance 323 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 200 pf q g total gate charge 166 q ge gate ? emitter charge 20 q gc gate ? collector charge v ge = 15v v bus = 300v i c = 50a 100 nc t d(on) tur n-o n delay ti me 40 t r rise time 9 t d(off) turn-off delay time 120 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 12 ns t d(on) tur n-o n delay ti me 42 t r rise time 10 t d(off) turn-off delay time 130 t f fall time 21 ns e on tur n-o n switchi ng energy x 0.5 e off turn-off switching energy y inductive switching (125c) v ge = 15v v bus = 400v i c = 50a r g = 2.7 ? 1 mj x e on includes diode reverse recovery y in accordance with jedec standard jesd24-1 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 250 i rm maximum reverse leakage current v r =600v t j = 125c 500 a i f(a v) maximum average forward current 50% duty cycle tc = 70c 60 a i f = 60a 1.6 1.8 i f = 120a 1.9 v f diode forward voltage i f = 60a t j = 125c 1.4 v t j = 25c 130 t rr reverse recovery time t j = 125c 170 ns t j = 25c 220 q rr reverse recovery charge i f = 60a v r = 400v di/dt =200a/s t j = 125c 920 nc
APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 6 temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit igbt 0.5 r thjc junction to case diode 0.9 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g package outline 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 6 typical performance curve output characteristics (v ge =15v) t j =-55c t j =25c t j =1 25 c 0 50 100 150 200 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0. 5% duty cycle transfer characteristics t j =-55c t j =25c t j =1 25 c 0 25 50 75 100 125 150 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 1 2 3 4 5 6 7 8 6 8 10 12 14 16 v ge , gate to emitter voltage (v) v ce , collector to emitter voltage (v) on state voltage vs gate to emitter volt. t j = 25c 250s pulse test < 0.5% duty cycle ic=100a ic=50a ic=25a 0 0.5 1 1.5 2 2.5 3 3.5 4 -50-250 255075100125 t j , junction temperature (c) v ce , collector to emitter voltage (v) on state voltage vs junction temperature 250s pulse test < 0.5% duty cycle v ge = 15v 0.70 0.80 0.90 1.00 1.10 1.20 -50-25 0 255075100125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 175 200 gate charge (nc) v ge , gate to emitter voltage (v) i c = 50a t j = 25c output characteristics (v ge =10v) t j =-55c t j =25c t j =125c 0 50 100 150 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5 % du t y c y cle
APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 6 v ge = 15v 20 30 40 50 60 0 255075100125150 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 2.7 ? v ge =15v, t j =25c v ge =15v, t j =125c 50 75 100 125 150 175 200 0 25 50 75 100 125 150 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 2.7 ? v ge =15v, t j =125c 0 10 20 30 40 50 60 0 255075100125150 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 2.7 ? t j = 25c t j = 125c 0 10 20 30 40 50 60 0 25 50 75 100 125 150 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 2.7 ? t j =125c, v ge =15v 0 0.5 1 1.5 2 0 25 50 75 100 125 150 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 2.7 ? t j = 125c 0 0.5 1 1.5 2 2.5 0 255075100125150 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15 v r g = 2.7 ? eo n, 5 0a eoff, 50a 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15 v t j = 125c 0 20 40 60 80 100 120 0 200 400 600 i c , collector current (a) minimum switching safe operating area v ce , collector to emitter voltage (v)
APTGF50DDA60T3 APTGF50DDA60T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 6 - 6 cies cres coes 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltag e v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching zcs zvs 0 40 80 120 160 200 240 0 20406080100 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 2.7 ? t j = 125c t c = 75c apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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